Reliability Study of AlGaN/GaN HEMTs Device
نویسندگان
چکیده
AlGaN/GaN HEMTs devices are studied intensely because of its ability of operation at higher voltage with higher power density. As the study progress, it is realized that the reliability of the fabricated device is a quite important issue. From the reliability study of AlGaN/GaN HEMTs, it is found that the current degradation has relationships with the isolation structure. In this paper, the differences of current degradations between two isolation methods are studied and some interpretations concerning the source of these degradations are discussed.
منابع مشابه
RADIATION RESPONSE AND RELIABILITY OF AlGaN
...........................................................................................................................................1 CHAPTER I: INTRODUCTION ............................................................................................................2 OVERVIEW OF GAN HEMTS .......................................................................................................
متن کاملCharacterization and analysis of trap-related effects in AlGaN-GaN HEMTs
Traps are characterized in AlGaN–GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce ‘‘false’’ surface-trap signals, i.e. the same type of current-mode DLTS (I-DLTS) or ICTS signals that are generally attributed to surface traps. Clarifying this as...
متن کاملStudy of proton irradiation effects on AlGaN/GaN high electron mobility transistors
AlGaN/GaN high electron mobility transistors (HEMTs) were exposed to 3 MeV protons at fluences of 6 10, 4 10 and 1 10 protons/cm. The drain saturation currents decreased by 20% and the maximum transconductance decreased by 5% at the highest fluence. As the fluence increased, the threshold voltage shifted more positive values. After proton irradiation, the gate leakage current increased. The Sch...
متن کاملElectrochemical Degradation Mechanisms in AlGaN/GaN HEMTs
Feng Gao, Carl. V. Thompson, Jesús del Alamo and Tomás Palacios Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, email: [email protected] The last twenty years have witnessed numerous de...
متن کاملMaterial and device issues of AlGaN/GaN HEMTs on silicon substrates
Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 8C) is demonstrated. Photoionisation spectroscopy reveals trap level of ...
متن کامل